| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| BD438 ON0195 BD442 BD440 |
RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN
POWER TRANSISTORS PNP SILICON
From old datasheet system
4.0 AMPERES POWER TRANSISTORS
Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| 2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS
Plastic Medium-Power Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
| BC737 BC738 |
PNP SILICON AF MEDIUM POWER TRANSISTORS
(BC737 / BC738) NPN SILICON AF MEDIUM POWER TRANSISTORS
|
Micro Electronics
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2SA483 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD312 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD318 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| 2SB531 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
